cvd scrubber

Deposition by chemical reaction between reactants. It is a chemical process that deposits thin film of diverse chemical substances. A substrate is exposed to volatile precursors and react to generate required deposit. Simultaneously, the byproducts also generated from the process.  Precursors used to deposit silicon is silane (SiH4).

The fast growth in electronic industry has brought new environmental challenges for processes applied in manufacturing of semiconductor chips, which are important key part of many advanced electronic devices.Potentially hazardous chemicals; arsine, silane and phosphine are mainly used in fabrication of semiconductor by chemical vapor deposition (CVD).

A dry scrubber use catalyst to remove toxic components by chemical adsorption on the surface. The adsorption does not depend on pollutant concentration and contact time, adsorption will take place in very short period of time. When the pollutants adsorbed on to the surface, the catalyst will convert the simple chemicals which is non-toxic and can be disposed of easily. The catalyst is to be replaced frequently when it saturated with pollutants. Optional sensor will be provided for indication of catalyst saturation.